Influence of the Plasma State on the Formation of Nano Crystalline SiC Films

The influence of the plasma state on the microstructure transformation from amorphous to nano-(crystalline) state is emphasized during the formation of the silicon carbide (SiC) films deposited by the plasma enhanced chemical vapor technique. The effect of two key parameters, the working pressure and hydrogen concentration in the gas flow, that perform the dependence by modulating the two essential factors of the plasma state-ions energy and gas composition, is in-depth investigated. The experimental results showed that nanocrystalline SiC films fit for field emitters could be achieved under an appropriate ion energy flow density and gas components in the (plasma).